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STS2302S датащи(PDF) 2 Page - SamHop Microelectronics Corp.

номер детали STS2302S
подробное описание детали  N-Channel E nhancement Mode Field Effect Transistor
PDF  8 Pages
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производитель  SAMHOP [SamHop Microelectronics Corp.]
домашняя страница  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

STS2302S датащи(HTML) 2 Page - SamHop Microelectronics Corp.

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E LE CTR ICAL CHAR ACTE R IS TICS (TA 25 C unless otherwise noted)
=
Parameter
Symbol
Condition
Min Typ Max Unit
OFF CHAR ACTER ISTICS
Drain-Source Breakdown Voltage
BVDSS
=
VGS 0V, ID 250uA
=
20
V
Zero Gate Voltage Drain Current
IDSS
VDS 16V, VGS 0V
=
=
1
uA
Gate-Body Leakage
IGSS
VGS
12V, VDS 0V
=
=
100 nA
ON CHAR ACTER ISTICS b
Gate Threshold Voltage
VGS(th)
VDS VGS, ID = 250uA
=
0.5
1.3
V
Drain-Source On-State R esistance
R DS(ON)
VGS 4.5V, ID 4A
47
VGS 2.5V, ID 2A
On-State Drain Current
ID(ON)
VDS = 5V, VGS = 4.5V
A
S
Forward Transconductance
FS
g
VDS 5V, ID
DYNAMIC CHAR ACTER ISTICS
c
Input Capacitance
CISS
CRSS
COSS
Output Capacitance
R everse Transfer Capacitance
VDS =15V, VGS = 0V
f =1.0MHZ
P
F
P
F
P
F
SWITCHING CHAR ACTER ISTICS
c
Turn-On Delay Time
R ise Time
Turn-Off Delay Time
tD(ON)
tr
tD(OFF)
tf
VDD = 10V,
ID = 1A,
VGS = 4.5V,
R GEN = 6 ohm
ns
ns
ns
ns
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
Qgd
VDS =10V, ID = 4A,
VGS =4.5V
nC
nC
nC
C
Fall Time
=
=
=
=
=
2
m-ohm
m-ohm
=3.8A
60
6
19
S T S 2302S
495
88
65
12
13
44
18
6.8
1.5
3
55
40
0.8



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