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ST25R3916 датащи(PDF) 138 Page - STMicroelectronics

номер детали ST25R3916
подробное описание детали  High performance NFC universal device and EMVCo™ reader
PDF  157 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

ST25R3916 датащи(HTML) 138 Page - STMicroelectronics

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Electrical characteristics
ST25R3916/7
138/157
DS12484 Rev 4
5.3
DC/AC characteristics for digital inputs and outputs
Table 120. Characteristics of CMOS I/Os(1)
Type
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Inputs(2)
VIH
High level input voltage
-
0.8 * VDD_IO
--
V
VIL
Low level input voltage
-
-
-
0.2 * VDD_IO
ILEAK
Input leakage current
VDD_IO = 5.5 V
-1
-
1
µA
Output
VOH
High level output voltage
Isource = 1 mA
VDD_IO = 3.3 to
5.5 V,
io_drv_lvl=0
0.9 * VDD_IO
--
V
Isource = 0.5 mA
VDD_IO = 1.65
to 3.3 V
io_drv_lvl = 1
--
VOL
Low level output voltage
Isource = 1 mA
VDD_IO = 3.3 to
5.5 V,
io_drv_lvl=0
-
-
0.1 * VDD_IO
Isource = 0.5 mA
VDD_IO = 1.65
to 3.3 V
io_drv_lvl = 1
-
-
0.1 * VDD_IO
CL
Capacitive load
-
-
-
50
pF
RO
Output resistance
VDD_IO = 3.3 V
-
250
500
Ω
RPD
Pull-down resistance pin MISO(3) VDD_IO = 3.3 V
-
10
-
kΩ
1. Minimum and maximum values tested in production at 25 °C, other temperature values evaluated from characterization.
2. Pins BSS, MOSI and SCLK.
3. Use bits miso_pd1 and miso_pd2 in the IO configuration register 2 to control the optional pull down on the MISO pin.



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