TCND5000

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Vishay Semiconductors

Rev. 1.6, 12-Jun-14

2

Document Number: 83795

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Fig. 1 - Forward Current Limit vs. Ambient Temperature

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OUTPUT (DETECTOR)

Reverse voltage

VR

60

V

Power dissipation

PV

75

mW

Junction temperature

Tj

100

°C

SENSOR

Ambient temperature range

Tamb

-40 to +85

°C

Storage temperature range

Tstg

-40 to +100

°C

Soldering temperature

acc. fig. 14

Tsd

260

°C

ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

0

20

40

60

80

100

120

16188

0

T

amb - Ambient Temperature (°C)

90

80

70

60

50

40

30

20

10

100

BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

SYMBOL

MIN.

TYP.

MAX.

UNIT

INPUT (EMITTER) (1)

Forward voltage

IF = 50 mA, tp = 20 ms

VF

1.2

1.5

V

Temperature coefficient of VF

IF = 1 mA

TKVF

-1.3

mV/K

Reverse current

VR = 5 V

IR

10

μA

Junction capacitance

VR = 0 V, f = 1 MHz, E = 0 lx

Cj

40

pF

Radiant intensity

IF = 20 mA, tp = 20 ms

Ie

11

15

mW/sr

Angle of half intensity



± 12

deg

Peak wavelength

IF = 100 mA



P

930

940

nm

Spectral bandwidth

IF = 100 mA



30

nm

Temperature coefficient of



p

IF = 100 mA

TK



P

0.2

nm/K

Rise time

IF = 100 mA

tr

15

ns

Fall time

IF = 100 mA

tf

15

ns