3

Radiation hardness assurance

This products is guaranteed in radiation as per ESCC 22900 and in compliance with ESCC 5207/005

specification.

Each lot is tested in radiation according to the following procedure::

•

Radiation condition of 0.1 rad (Si)/s

•

Test of 11 samples by wafer, 5 biased at 80% of V(BR)CEO, 5 unbiased and for reference

•

Acceptance criteria of each wafer at 100 krad if all 10 samples comply with the post radiation electrical

characteristics as per Table 4.

•

Radiation verification test (RVT) report is delivered with the lot manufactured with the wafer of the tested

samples

RVT includes the value of each parameter at 30, 50, 70 and 100 krad (Si), post annealing at 24 hour / 25°C and

post annealing at 168 hours / 100°C.

Table 4. ESCC5207/005 post radiation electrical characteristics

Symbol

Parameter

Test conditions

Min.

Max

Unit

ICBO

Collector cut-off current (IE=0)

VCB= 60 V

10

nA

IEBO

Emitter cut-off current (IC= 0)

VEB = 4 V

20

nA

V(BR)CBO

Collector-base breakdown voltage (IE= 0)

IC=10 μA

60

V

V(BR)CEO(1)

IC = 10 mA

60

V

V(BR)EBO

Emitter-base breakdown voltage (IC= 0)

IE = 10 μA

5

V

VCE(sat)(1)

Collector-emitter saturation voltage

IC=100 μA, IB = 10 μA

0.2

V

IC= 1 mA, IB = 100 μA

0.25

VBE(sat)(1)

Base-emitter saturation voltage

IC=100 μA, IB = 10 μA

0.7

V

IC= 1 mA, IB = 100 μA

0.8

[hFE](1)

Post irradiation gain calculation (2)

IC= 10 μA, VCE= 5 V

[50]

IC= 100 μA, VCE= 5 V

[75]

450

IC= 500 μA, VCE= 5 V

[75]

450

IC= 1 mA, VCE= 5 V

[75]

450

IC= 10 mA, VCE= 5 V

[65]

1. Pulsed duration = 300 μs, duty cycle ≥ 2 %

2. The post-irradiation gain calculation of [hFE], made using hFE measurements from prior to and on completion of irradiation

testing and after each annealing step if any, shall be as specified in MILSTD-750 method 1019.

2N3810HR

Radiation hardness assurance

DS6098 - Rev 9

page 6/14