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STM8301 датащи(PDF) 4 Page - SamHop Microelectronics Corp.

номер детали STM8301
подробное описание детали  Dual E nhancement Mode Field E ffect Transistor (N and P Channel)
PDF  11 Pages
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производитель  SAMHOP [SamHop Microelectronics Corp.]
домашняя страница  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

STM8301 датащи(HTML) 4 Page - SamHop Microelectronics Corp.

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Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
Figure 4. On-Resistance Variation with
Drain Current and Temperature
Figure 3. Capacitance
VDS, Drain-to Source Voltage (V)
VGS, Gate-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
4
5
20
16
12
8
4
0
0
0.5
1
1.5
2
2.5
3
VGS=4V
VGS=2.5V
25 C
25
20
15
10
5
0
0.0
0.8
1.6
2.4
3.2
4.0
4.8
Tj=125 C
Tj( C)
2.2
1.8
1.4
1.0
0.6
0.4
0
-50
0
50
100
150
1200
1000
800
600
400
200
0
0
5
10
15
20
25
30
Ciss
Coss
Crss
Parameter
Symbol
Condition
Min Typ Max Unit
ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted)
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage
VSD
VGS = 0V, Is =1.7A
N-Ch
0.79
1.2
-0.8
-1.2
VGS = 0V, Is =-1.7A
P-Ch
V
b
C
N-Channel
-25
25
75
125
V GS =10V
ID=7A
S T M8301
VGS=10V
VGS=3V
VGS=4.5V
VGS=5V
-55 C
Notes
c.Guaranteed by design,not subject to production testing.
b.Pulse Test:PulseWidth 300μs,Duty Cycle 2%.
＜
＜
a.Surface Mounted on FR4 Board,t 10sec.
＜
* R JA is 62.5 C/W when mounted on 1in FR-4 board with 2oz Copper
2
* R JA is 125 C/W when mounted on 0.02 in FR-4 board with 2oz Copper
2



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