SOC38101 datasheet(3/14 Pages) STMICROELECTRONICS

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Electrical characteristics

Tcase = 25 °C unless otherwise specified.

Table 3. Electrical characteristics

Symbol

Parameter

Test conditions

Min.

Max.

Unit

ICBO

Collector-base cut-off current (IE = 0)

VCB = -50 V

-10

VCB = -50 V TC = 150 °C

-10

μA

IEBO

Emitter-base cut-off current (IC = 0)

VEB = -4 V

-20

V(BR)CBO

Collector-base breakdown voltage

(IE = 0)

IC = -10 μA

-60

V(BR)CEO (1)

Collector-emitter breakdown voltage

(IB = 0)

IC = -10 mA

-60

V(BR)EBO

Emitter-base breakdown voltage

(IC = 0)

IE = -10 μA

-5

VCE(sat) (1)

Collector-emitter saturation voltage

IC = -100 µA IB = -10 µA

-0.2

IC = -1 mA IB = -100 µA

-0.25

VBE(sat) (1)

Base-emitter saturation voltage

IC = -100 µA IB = -10 µA

-0.7

IC = -1 mA IB = -100 µA

-0.8

hFE (1)

DC current gain

IC = 10 µA VCE = 5 V

100

IC = 100 µA VCE = 5 V

150

450

IC = 500 µA VCE = 5 V

150

450

IC = 1 mA VCE = 5 V

150

450

IC = 10 mA VCE = 5 V

125

IC = 100 µA VCE = -5 V

Tamb = -55 °C

hFE2-1 / hFE2-2

DC current ratio comparison

IC = -100 µA VCE = -5 V

0.9

1.1

hFE2-1 / hFE2-2

DC current ratio comparison

IC = -100 µA VCE = -5 V

Tamb = -55 °C to +125 °C

0.85

1.18

Δ|VBE1 -VBE2|

Base-emitter voltage differential

VCE = -5 V IC = -10 µA

VCE = -5 V IC = -100 µA

VCE = -5 V IC = -10 mA

Δ|VBE1 -VBE2|

Base-emitter voltage differential

VCE = -5 V IC = -100 µA

Tamb = -55 °C to +25 °C

0.8

Tamb = +25 °C to +125 °C

ILks

Leakage current between sections

V = -50 V to E2, B2, C2

V = 0 V to E1, B1, C1

-5

µA

hfe

Small signal current gain

VCE = -10 V IC = -1 mA

f = 1 kHz

150

600

2N3810HR

Electrical characteristics

DS6098 - Rev 9

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