2STF2340 datasheet(3/11 Pages) STMICROELECTRONICS

номер детали	2STF2340

подробное описание детали	Low voltage fast-switching PNP power transistors

PDF	11 Pages

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производитель	STMICROELECTRONICS [STMicroelectronics]

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2STF2340, 2STN2340

Electrical characteristics

Doc ID 14222 Rev 2

3/10

Electrical characteristics

Tcase = 25 °C unless otherwise specified

Table 4.

Electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ICBO

Collector cut-off current

(IE = 0)

VCB = - 40 V

-0.1

µA

IEBO

Emitter cut-off current

(IC = 0)

VEB = - 5 V

-0.1

µA

V(BR)CBO

(1)

Pulse test: pulse duration

≤ 300 µs, duty cycle ≤ 2 %

Collector-base

breakdown voltage

(IE = 0)

IC = - 100 µA

-40

V(BR)CEO

(1)

Collector-emitter

breakdown voltage

(IB = 0)

IC = - 10 mA

-40

V(BR)EBO

Emitter-base breakdown

voltage (IC = 0)

IE = - 100 µA

-5

VCE(sat)

(1)

Collector-emitter

saturation voltage

IC = - 2 A

IB = - 100 mA

IC = - 3 A

IB = - 150 mA

-250

-350

VBE(sat)

(1)

Base-emitter saturation

voltage

IC = - 2 A

IB = - 100 mA

-1.2

hFE

(1)

DC current gain

IC = - 0.1 A

VCE = - 2 V

IC = - 1 A

VCE = - 2 V

IC = - 3 A

VCE = - 2 V

100

180

220

450

Transition frequency

IC = - 0.1 A

VCE = - 5 V

f = 100 MHz

100

MHz

CCBO

Collector-base

capacitance (IE = 0)

VCB = - 10 V

f = 1 MHz

ton

toff

Resistive load

Turn-on time

Turn-off time

IC = - 1.5 A

VCC = - 10 V

IB(on) = - IB(off) = - 150 mA

VBB(off) = 5 V

450

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