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STM4435 датащи(PDF) 3 Page - SamHop Microelectronics Corp.

номер детали STM4435
подробное описание детали  P-Channel E nhancement Mode Field Effect Transistor
PDF  8 Pages
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производитель  SAMHOP [SamHop Microelectronics Corp.]
домашняя страница  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

STM4435 датащи(HTML) 3 Page - SamHop Microelectronics Corp.

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S T M4435
Parameter
S ymbol
Condition
Min Typ Max Unit
E LE CTR ICAL CHAR ACTE R IS TICS (TA=25 C unless otherwise noted)
C
DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS
Diode Forward Voltage
VSD
VGS = 0V, Is =-1.7A
-0.75 -1.2
V
b
Notes
a.Surface Mounted on FR4 Board, t <=10sec.
c.Guaranteed by design, not subject to production testing.
b.Pulse Test:Pulse Width<=300us, Duty Cycle<= 2%.
F igure 1. Output C haracteristics
F igure 2. Transfer C haracteristics
-V GS , G ate-to-S ource Voltage (V )
-V DS , Drain-to-S ource Voltage (V )
30
20
15
10
5
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3
25 C
20
15
10
5
1
0
0
-55 C
125 C
0.6
3.6
3.0
2.4
1.8
1.2
-V G S =2.5V
-V G S =4V
-V G S =3V
-V G S =4.5V
-V G S =10V
25
F igure 4. On-R esistance Variation with
Drain C urrent and Temperature
-ID, Drain C urrent (A)
T j( C )
T j, J unction T emperature ( C )
F igure 3. On-R esistance vs. Drain C urrent
and G ate V oltage
50
20
10
0
12
18
24
30
0
V GS =-10V
V GS =-4.5V
6
30
40
2.0
1.8
1.6
1.4
1.2
1.0
0
25
50
125
100
75
V GS =-10V
ID=-8A
150
V GS =-4.5V
ID=-5A



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