STG2017 datasheet(1/7 Pages) SAMHOP

номер детали	STG2017

подробное описание детали	Dual N-Channel E nhancement Mode Field Effect Transistor

PDF	7 Pages

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производитель	SAMHOP [SamHop Microelectronics Corp.]

домашняя страница	http://www.samhop.com.tw

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20

Dual N-Channel E nhancement Mode Field E ffect Transistor

S urface Mount Package.

ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted)

Parameter

S ymbol

Limit

Unit

Drain-S ource Voltage

VDS

V

Gate-S ource Voltage

VGS

10

V

Drain Current-Continuous @ TJ=25 C

-Pulsed

ID

7

28

1.7

1.5

A

W

IDM

Drain-S ource Diode Forward Current

IS

Maximum Power Dissipation

PD

Operating Junction and S torage

Temperature R ange

TJ, TS TG

-55 to 150

C

THE R MAL CHAR ACTE R IS TICS

Thermal R esistance, Junction-to-Ambient

R JA

85

/W

C

a

b

S amHop Microelectronics C orp.

May,18 2005

1

P R ODUC T S UMMAR Y

V DS S

ID

R DS (ON) ( mW ) Max

20V

7A

F E AT UR E S

S uper high dense cell design for low R DS(ON).

R ugged and reliable.

20 @ V GS = 4.5V

(T OP V IE W)

T S S OP

1

S T G 2017

28 @ V GS = 2.5V

G 2

S 2

D1/D2

G 1

S 1

D1/D2

2

3

4

8

7

6

5

G 1

D1

S 1

G 2

D2

S 2

E S D Protected.

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