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STC2200 датащи(PDF) 3 Page - SamHop Microelectronics Corp.

номер детали STC2200
подробное описание детали  N-Channel E nhancement Mode Field Effect Transistor
PDF  7 Pages
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производитель  SAMHOP [SamHop Microelectronics Corp.]
домашняя страница  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

STC2200 датащи(HTML) 3 Page - SamHop Microelectronics Corp.

  STC2200 Datasheet HTML 1Page - SamHop Microelectronics Corp. STC2200 Datasheet HTML 2Page - SamHop Microelectronics Corp. STC2200 Datasheet HTML 3Page - SamHop Microelectronics Corp. STC2200 Datasheet HTML 4Page - SamHop Microelectronics Corp. STC2200 Datasheet HTML 5Page - SamHop Microelectronics Corp. STC2200 Datasheet HTML 6Page - SamHop Microelectronics Corp. STC2200 Datasheet HTML 7Page - SamHop Microelectronics Corp.  
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S T C 2200
Parameter
S ymbol
Condition
Min Typ Max Unit
E LE CTR ICAL CHAR ACTE R IS TICS (TA=25 C unless otherwise noted)
DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS
Diode Forward Voltage
VSD
VGS = 0V, Is =1A
0.83 1.2
V
b
C
Notes
c.Guaranteed by design, not subject to production testing.
b.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
F igure 1. Output C haracteristics
F igure 2. Transfer C haracteristics
F igure 4. On-R esistance Variation with
Temperature
F igure 3. C apacitance
V DS , Drain-to S ource Voltage (V )
V GS , G ate-to-S ource Voltage (V )
V DS , Drain-to-S ource Voltage (V )
a.Surface Mounted on FR 4 Board, t 10sec.
5
0
5
10
15
20
25
30
C iss
C oss
500
400
300
200
100
0
20
16
12
8
4
0
0
0.5
1
1.5
2
2.5
3
V GS =4V
V GS =2V
3
2.2
1.8
1.4
1.0
0.6
0.2
0
-50
0
50
100
125
T j( C )
-25
25
75
V GS =4.5V
ID=2A
C rss
25 C
15
12
9
6
3
0
0.0
0.6
1.2
1.8
2.4
3.0
3.6
T j=125 C
-55 C
V GS =3V
V GS =4.5V
V GS =10V



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