DUSBULC6-CSP4

Document number: DS37554 Rev. 4

– 4

2 of 6

www.diodes.com

April 2017

© Diodes Incorporated

DUSBULC6-CSP4

PART OBSOLETE

– NO ALTERNATE PART

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Conditions

Peak Pulse Power Dissipation

PPP

70

W

8/20µs (Note 5)

Peak Pulse Current

IPP

7.5

A

8/20

μs (Note 5)

ESD Protection

– Contact Discharge

VESD_Contact

±15

kV

Standard IEC 61000-4-2

ESD Protection

– Air Discharge

VESD_Air

±15

kV

Standard IEC 61000-4-2

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Thermal Resistance, Junction to Ambient Typical (Note 5)

RθJA

+206

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Conditions

Reverse Breakdown Voltage

VBR

6

−

9

V

IR = 1mA

Reverse Leakage Current (Note 6)

IR

−

−

70

nA

VR =3V

Dynamic Impedance

Rd

−

0.35

−

Ω

IPP = 1 to 5A,

8/20μs

Channel Input Capacitance

CIN

−

0.8

1.2

pF

VIN = 0V, f = 1MHz, VOSC = 30mV

Notes:

5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website

at http://www.diodes.com.

6. Short duration pulse test used to minimize self-heating effect.

-10

-9

-8

-7

-6

-5

-4

-3

-2

-1

0

F(Hz

)

Figure 1. Eye diagram, board only

(according to USB2.0 high speed specif ication)

-10

-9

-8

-7

-6

-5

-4

-3

-2

-1

0

F(Hz

)

Figure 2. Eye diagram, board with DUSBULC6-CSP4

(according to USB2.0 high speed specif ication)