DMHC6070LSD

Document number: DS38714 Rev. 1 - 2

2 of 10

www.diodes.com

April 2016

© Diodes Incorporated

DMHC6070LSD

Maximum Ratings

– N-Channel (@T

A = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Units

Drain-Source Voltage

VDSS

60

V

Gate-Source Voltage

VGSS

±20

V

Continuous Drain Current (Note 5) VGS = 10V

Steady

State

TA = +25°C

TA = +70°C

ID

3.1

2.5

A

t<10s

TA = +25°C

TA = +70°C

ID

4.1

3.3

A

Maximum Continuous Body Diode Forward Current (Note 5)

IS

2.0

A

Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)

IDM

15

A

Avalanche Current (Note 6) L = 0.1mH

IAS

12

A

Avalanche Energy (Note 6) L = 0.1mH

EAS

8

mJ

Maximum Ratings

– P-Channel (@T

A = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Units

Drain-Source Voltage

VDSS

-60

V

Gate-Source Voltage

VGSS

±20

V

Continuous Drain Current (Note 5) VGS = -10V

Steady

State

TA = 25°C

TA = 70°C

ID

-2.4

-1.9

A

t<10s

TA = 25°C

TA = 70°C

ID

-3.1

-2.5

A

Maximum Continuous Body Diode Forward Current (Note 5)

IS

-2.0

A

Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)

IDM

-12

A

Avalanche Current (Note 6) L = 0.1mH

IAS

-12

A

Avalanche Energy (Note 6) L = 0.1mH

EAS

8

mJ

Thermal Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Units

Total Power Dissipation (Note 5)

PD

1.6

W

Thermal Resistance, Junction to Ambient (Note 5)

Steady State

RθJA

75

°C/W

t<10s

45

Thermal Resistance, Junction to Case (Note 5)

RθJC

11

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C