DMHC10H170SFJ

Document number: DS37571 Rev. 4 - 2

2 of 10

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May 2022

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DMHC10H170SFJ

Maximum Ratings Q1 & Q4 N-Channel (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

VDSS

100

V

Gate-Source Voltage

VGSS

±20

V

Continuous Drain Current (Note 5) VGS = 10V

Steady

State

TA = +25°C

TA = +70°C

ID

2.9

2.3

A

Maximum Body Diode Forward Current (Note 5)

IS

2.5

A

Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)

IDM

13

A

Maximum Ratings Q2 & Q3 P-Channel (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

VDSS

-100

V

Gate-Source Voltage

VGSS

±20

V

Continuous Drain Current (Note 5) VGS = -10V

Steady

State

TA = +25°C

TA = +70°C

ID

-2.3

-1.9

A

Maximum Body Diode Forward Current (Note 5)

IS

-2.3

A

Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)

IDM

-11

A

Thermal Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Total Power Dissipation (Note 5)

PD

2.1

W

Thermal Resistance, Junction to Ambient (Note 5)

RJA

60

°C/W

Thermal Resistance, Junction to Case (Note 5)

RJC

6

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Note:

5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout.