DMC6040SSD

Document number: DS36829 Rev. 1 - 2

2 of 9

www.diodes.com

June 2014

© Diodes Incorporated

DMC6040SSD

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Q1

Q2

Units

Drain-Source Voltage

VDSS

60

-60

V

Gate-Source Voltage

VGSS

±20

±20

V

Continuous Drain Current (Note 6) VGS = -10V

Steady

State

TA = +25°C

TA = +70°C

ID

5.1

4.1

-3.1

-2.5

A

t<10s

TA = +25°C

TA = +70°C

ID

6.5

5.2

-3.9

-3.1

A

Maximum Body Diode Forward Current (Note 6)

IS

2.1

-2.1

A

Pulsed Drain Current (10µs pulse, duty cycle = 1%)

IDM

28

-19

A

Avalanche Current (Note 7) L = 0.1mH

IAS

17.2

-17.6

A

Avalanche Energy (Note 7) L = 0.1mH

EAS

14.7

15.4

mJ

Thermal Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Units

Total Power Dissipation (Note 5)

TA = +25°C

PD

1.24

W

TA = +70°C

0.8

Thermal Resistance, Junction to Ambient (Note 5)

Steady state

RθJA

101

°C/W

t < 10s

61

Total Power Dissipation (Note 6)

TA = +25°C

PD

1.56

W

TA = +70°C

1.0

Thermal Resistance, Junction to Ambient (Note 6)

Steady state

RθJA

80

°C/W

t<10s

49

Thermal Resistance, Junction to Case (Note 6)

RθJC

14.7

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Electrical Characteristics N-Channel Q1 (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage

BVDSS

60

⎯

⎯

V

VGS = 0V, ID = 250µA

Zero Gate Voltage Drain Current

IDSS

⎯

⎯

1

µA

VDS = 48V, VGS = 0V

Gate-Source Leakage

IGSS

⎯

⎯

±100

nA

VGS = ±20V, VDS = 0V

ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage

VGS(th)

1

⎯

3

V

VDS = VGS, ID = 250µA

Static Drain-Source On-Resistance

RDS (ON)

⎯

33

40

mΩ

VGS = 10V, ID = 8A

⎯

37

55

VGS = 4.5V, ID = 5A

Diode Forward Voltage

VSD

⎯

0.7

1.2

V

VGS = 0V, IS = 1A

DYNAMIC CHARACTERISTICS (Note 9)

Input Capacitance

Ciss

⎯

1130

⎯

pF

VDS = 15V, VGS = 0V f = 1.0MHz

Output Capacitance

Coss

⎯

69

⎯

Reverse Transfer Capacitance

Crss

⎯

42

⎯

Gate Resistance

RG

⎯

1.7

⎯

Ω

VDS = 0V, VGS = 0V, f = 1.0MHz

Total Gate Charge (VGS = 10V)

Qg

⎯

20.8

⎯

nC

VDS = 30V, ID = 4.3A

Total Gate Charge (VGS = 4.5V)

Qg

⎯

9.4

⎯

Gate-Source Charge

Qgs

⎯

3.3

⎯

Gate-Drain Charge

Qgd

⎯

3.0

⎯

Turn-On Delay Time

tD(on)

⎯

3.6

⎯

nS

VGS = 10V, VDD = 30V, RG = 6Ω,

ID = 4.3A

Turn-On Rise Time

tr

⎯

1.8

⎯

Turn-Off Delay Time

tD(off)

⎯

20.1

⎯

Turn-Off Fall Time

tf

⎯

4.3

⎯

Body Diode Reverse Recovery Time

trr

⎯

14.2

⎯

nS

IS = 4.3A, dI/dt = 100A/μs

Body Diode Reverse Recovery Charge

Qrr

⎯

7.5

⎯

nC

IS = 4.3A, dI/dt = 100A/μs

Notes:

5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

7. UIS in production with L = 0.1mH, starting TA = +25°C.

8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to product testing.