DMC4029SSD

Document number: DS36350 Rev. 3 - 2

2 of 8

www.diodes.com

March 2014

© Diodes Incorporated

DMC4029SSD

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value_Q2

Value_Q1

Units

Drain-Source Voltage

VDSS

40

-40

V

Gate-Source Voltage

VGSS

±20

±20

V

Continuous Drain Current (Note 7) VGS = 10V

Steady

State

TA = +25°C

TA = +70°C

ID

7.0

5.6

-5.1

-4.1

A

t<10s

TA = +25°C

TA = +70°C

ID

9.0

7.2

-6.5

-5.2

A

Maximum Body Diode Forward Current (Note 7)

IS

2.5

-2.5

A

Pulsed Drain Current (10µs pulse, duty cycle = 1%)

IDM

70

-40

A

Thermal Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Units

Total Power Dissipation (Note 6)

TA = +25°C

PD

1.3

W

TA = +70°C

0.8

Thermal Resistance, Junction to Ambient (Note 6)

Steady state

RθJA

98

°C/W

t<10s

59

Total Power Dissipation (Note 7)

TA = +25°C

PD

1.8

W

TA = +70°C

1.1

Thermal Resistance, Junction to Ambient (Note 7)

Steady state

RθJA

71

°C/W

t<10s

43

Thermal Resistance, Junction to Case (Note 7)

RθJC

11.8

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Electrical Characteristics N-Channel Q2 (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage

BVDSS

40

⎯

⎯

V

VGS = 0V, ID = 250µA

Zero Gate Voltage Drain Current

IDSS

⎯

⎯

1

µA

VDS = 40V, VGS = 0V

Gate-Source Leakage

IGSS

⎯

⎯

±100

nA

VGS = ±20V, VDS = 0V

ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage

VGS(th)

1.0

⎯

3.0

V

VDS = VGS, ID = 250µA

Static Drain-Source On-Resistance

RDS(ON)

⎯

15

24

mΩ

VGS = 10V, ID = 6A

⎯

20

32

VGS = 4.5V, ID = 5A

Diode Forward Voltage

VSD

⎯

0.7

1.0

V

VGS = 0V, IS = 1.0A

DYNAMIC CHARACTERISTICS (Note 9)

Input Capacitance

Ciss

⎯

1060

⎯

pF

VDS = 20V, VGS = 0V,

f = 1.0MHz

Output Capacitance

Coss

⎯

84

⎯

Reverse Transfer Capacitance

Crss

⎯

58

⎯

Gate Resistance

RG

⎯

1.6

⎯

Ω

VDS = 0V, VGS = 0V, f = 1.0MHz

Total Gate Charge (VGS = 4.5V)

Qg

⎯

8.8

⎯

nC

VDS = 20V, ID = 8A

Total Gate Charge (VGS = 10V)

Qg

⎯

19.1

⎯

Gate-Source Charge

Qgs

⎯

3.0

⎯

Gate-Drain Charge

Qgd

⎯

2.5

⎯

Turn-On Delay Time

tD(on)

⎯

5.3

⎯

nS

VDD = 25V, RL = 2.5Ω

VGS = 10V, RG = 3Ω

Turn-On Rise Time

tr

⎯

7.1

⎯

Turn-Off Delay Time

tD(off)

⎯

15.1

⎯

Turn-Off Fall Time

tf

⎯

4.8

⎯

Body Diode Reverse Recovery Time

trr

⎯

10.5

⎯

nS

IF = 8A, di/dt = 100A/μs

Body Diode Reverse Recovery Charge

Qrr

⎯

4.15

⎯

nC

IF = 8A, di/dt = 100A/μs