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isc Silicon NPN Power Transistor

ZXT690BK

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

MAX

UNIT

VCBO

Collector-Base Breakdown Voltage

IC= 0.1mA

60

V

VCEO

Collector-Emitter Breakdown Voltage

IC= 10mA

45

V

VEBO

Emitter-Base Breakdown Voltage

IE= 0.1mA

5

V

VCE(sat)-1

Collector-Emitter Saturation Voltage

IC= 0.1A; IB= 0.5mA

-

85

mV

VCE(sat)-2

IC= 1A; IB= 5mA

-

360

mV

VCE(sat)-3

IC= 2mA; IB= 40mA

-

320

mV

VCE(sat)-4

IC= 3A; IB= 150mA

-

350

mV

VBE(sat)

Base-Emitter Saturation Voltage

IC= 3A; IB= 150mA

-

1.2

V

VBE(on)

Base-Emitter Tun-On Voltage

IC= 3A; VCE= 2V

-

1.1

V

ICBO

Collector Cutoff Current

VCB= 35V; IE= 0

-

20

nA

IEBO

Emitter Cutoff Current

VEB= 4V; IC= 0

-

20

nA

hFE-1

DC Current Gain

IC= 100mA; VCE= 2V

500

-

-

hFE-2

IC= 1A; VCE= 2V

400

-

-

hFE-3

IC= 2A; VCE= 2V

150

-

-

hFE-4

IC= 3A; VCE= 2V

60

-

-

NOTICE：

ISC reserves the rights to make changes of the content herein the datasheet at any time without

notification. The information contained herein is presented only as a guide for the applications of

our products.

ISC products are intended for usage in general electronic equipment. The products are not

designed for use in equipment which require specialized quality and/or reliability, or in equipment

which could have applications in hazardous environments, aerospace industry, or medical

field. Please contact us if you intend our products to be used in these special applications.

ISC makes no warranty or guarantee regarding the suitability of its products for any particular

purpose, nor does ISC assume any liability arising from the application or use of any products, and

specifically disclaims any and all liability, including without limitation special, consequential or

incidental damages.