TCMT4100, TCMT4106

www.vishay.com

Vishay Semiconductors

Rev. 1.1, 19-Jan-16

2

Document Number: 84181

For technical questions, contact: optocoupleranswers@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes

• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not

implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute

maximum ratings for extended periods of the time can adversely affect reliability.

(1) Refer to reflow profile for soldering conditions for surface mounted devices.



Also refer to “Assembly Instructions” (www.vishay.com/doc?80054).

Note

• Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering

evaluation. Typical values are for information only and are not part of the testing requirements.

ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

INPUT

Reverse voltage

VR

6V

Forward current

IF

60

mA

Forward surge current

tp  10 μs

IFSM

1.5

A

Power dissipation

Pdiss

100

mW

Junction temperature

Tj

125

°C

OUTPUT

Collector emitter voltage

VCEO

70

V

Emitter collector voltage

VECO

7V

Collector current

IC

50

mA

Collector peak current

tp/T = 0.5, tp  10 ms

ICM

100

mA

Power dissipation

Pdiss

150

mW

Junction temperature

Tj

125

°C

COUPLER

AC isolation test voltage (RMS)

Related to standard climate 23/50

DIN 50014

VISO

3750

VRMS

Total power dissipation per channel

Ptot

250

mW

Operating ambient temperature range

Tamb

-40 to +100

°C

Storage temperature range

Tstg

-40 to +125

°C

Soldering temperature (1)

Tsld

260

°C

ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

SYMBOL

MIN.

TYP.

MAX.

UNIT

INPUT

Forward voltage

IF = 50 mA

VF

-

1.35

1.6

V

Junction capacitance

VR = 0, f = 1 MHz

Cj

-8

-

pF

OUTPUT

Collector emitter voltage

IC = 100 μA

VCEO

70

-

-

V

Emitter collector voltage

IE = 100 μA

VECO

7-

-

V

Collector dark current

VCE = 20 V, IF = 0 A

ICEO

-

-

100

nA

COUPLER

Collector emitter saturation voltage

IF = 10 mA, IC = 1 mA

VCEsat

--

0.3

V

Cut-off frequency

VCE = 5 V, IF = 10 mA,

RL = 100 

fc

-

100

-

kHz

Coupling capacitance

f = 1 MHz

Ck

-0.3

-

pF

CURRENT TRANSFER RATIO (Tamb = 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

PART

SYMBOL

MIN.

TYP.

MAX.

UNIT

IC/IF

VCE = 5 V, IF = 5 mA

TCMT4100

CTR

50

-

600

%

TCMT4106

CTR

100

-

300

%