BS170P

Document Number DS37978 Rev. 1 - 2

2 of 6

www.diodes.com

May 2015

© Diodes Incorporated

BS170P

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

VDSS

60

V

Gate-Source Voltage

VGSS

±20

V

Continuous Drain Current

ID

270

mA

Pulsed Drain Current

IDM

3

A

Thermal Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Power Dissipation

PD

625

mW

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

60





V

ID = 100µA, VGS = 0V

Zero Gate Voltage Drain Current

IDSS





0.5

µA

VDS = 25V, VGS = 0V

Gate-Body Leakage

IGSS





±10

nA

VGS = 15V, VDS = 0V

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(th)

0.8



3.0

V

ID = 1mA, VDS = VGS

Static Drain-Source On-Resistance (Note 5)

RDS(ON)





5

Ω

VGS = 10V, ID = 200mA

Forward Transconductance (Notes 5 & 7)

gfs



200



mS

VDS = 10V, ID = 200mA

DYNAMIC CHARACTERISTICS (Note 7)

Input Capacitance

Ciss



60



pF

VDS = 10V, VGS = 0V

f = 1.0MHz

Turn-On Delay Time (Note 6)

tD(ON)





10

ns

VDD = 15V, ID = 600mA

Turn-Off Delay Time (Note 6)

tD(OFF)





10

Notes:

5. Measured under pulsed conditions. Pulse width

≤ 300µs. Duty cycle ≤ 2%.

6. Switching characteristics are independent of operating junction temperature. Switching times are measured with a 50

Ω source impedance and

<5ns rise time on a pulse generator.

7. For design aid only, not subject to production testing.