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IXDA20N120AS датащи(PDF) 4 Page - IXYS Corporation

номер детали IXDA20N120AS
подробное описание детали  High Voltage IGBT
PDF  4 Pages
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производитель  IXYS [IXYS Corporation]
домашняя страница  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXDA20N120AS датащи(HTML) 4 Page - IXYS Corporation

  IXDA20N120AS Datasheet HTML 1Page - IXYS Corporation IXDA20N120AS Datasheet HTML 2Page - IXYS Corporation IXDA20N120AS Datasheet HTML 3Page - IXYS Corporation IXDA20N120AS Datasheet HTML 4Page - IXYS Corporation  
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© 2000 IXYS All rights reserved
4 - 4
IXDA 20N120 AS
Fig. 5 Typ. turn on energy and switching
Fig. 6 Typ. turn off energy and switching
times versus collector current
times versus collector current
Fig. 7 Typ. turn on energy and switching
Fig. 8 Typ. turn off energy and switching
times versus gate resistor
times versus gate resistor
Fig. 9 Reverse biased safe operating area
Fig. 10 Typ. transient thermal impedance
RBSOA
0
10203040
0
1
2
3
4
5
6
7
0
20
40
60
80
100
120
140
0
102030
40
0
1
2
3
4
5
0
100
200
300
400
500
0.00001
0.0001
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
0
50
100
150
200
250
300
350
0
1
2
3
4
0
400
800
1200
1600
0
50
100
150
200
250
300
350
0
4
8
12
0
80
160
240
single pulse
V
CE = 600V
V
GE = ±15V
R
G = 68W
T
J = 125°C
IXDH20N120AU1
V
CE = 600V
V
GE = ±15V
I
C
= 20A
T
J = 125°C
0
200
400
600
800
1000 1200
0
5
10
15
20
25
30
35
40
R
G = 68W
T
J = 125°C
V
CEK < VCES
V
CE = 600V
V
GE = ±15V
R
G = 68W
T
J = 125°C
E
on
V
CE = 600V
V
GE = ±15V
I
C
= 20A
T
J = 125°C
t
d(on)
t
r
E
off
t
d(off)
t
f
E
on
t
d(on)
t
r
E
off
t
d(off)
t
f
I
C
A
I
C
A
E
off
E
on
t
t
R
G
W
R
G
W
V
CE
t
s
mJ
E
on
mJ
E
off
ns
t
ns
t
I
CM
K/W
Z
thJC
IGBT
diode
V
A
mJ
ns
ns
mJ



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