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10.0-40.0 GHz GaAs MMIC

Distributed Amplifier

Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099

Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com

Characteristic Data and Specifications are subject to change without notice.

©

2005 Mimix Broadband, Inc.

Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept

their obligation to be compliant with U.S. Export Laws.

May 2005 - Rev 05-May-05

22DSBA0423

App Note [1] Biasing - As shown in the bonding diagram, this device operates using a self-biased architecture and only requires one drain

bias. Bias is nominally Vd=5V, I=155mA.

App Note [2] Bias Arrangement - Each DC pad (Vd) needs to have DC bypass capacitance (~100-200 pF) as close to the device as possible.

Additional DC bypass capacitance (~0.01 uF) is also recommended.

MTTF Table (TBD)

Backplate

Temperature

55 deg Celsius

75 deg Celsius

95 deg Celsius

Channel

Temperature

deg Celsius

deg Celsius

deg Celsius

FITs

E+

E+

E+

MTTF Hours

E+

E+

E+

Rth

C/W

C/W

C/W

Bias Conditions: Vd=5V, I=115 mA

These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry.