STF35N65DM2

Electrical ratings

DocID030873 Rev 2

3/13

1

Electrical ratings

Table 2: Absolute maximum ratings

Symbol

Parameter

Value

Unit

Gate-source voltage

±25

V

32

A

20

IDM(1)

Drain current (pulsed)

90

A

40

W

dv/dt(2)

Peak diode recovery voltage slope

50

V/ns

dv/dt(3)

MOSFET dv/dt ruggedness

50

Insulation withstand voltage (RMS) from all three leads to external

2.5

kV

Storage temperature range

-55 to 150

°C

Operating junction temperature range

Notes:

Table 3: Thermal data

Symbol

Parameter

Value

Unit

Thermal resistance junction-case

3.1

°C/W

Thermal resistance junction-ambient

62.5

Table 4: Avalanche characteristics

Symbol

Parameter

Value

Unit

Avalanche current, repetitive or non-repetitive

4

A

EAS(1)

Single pulse avalanche energy

1150

mJ

Notes: