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STF18N60DM2 датащи(PDF) 2 Page - STMicroelectronics |
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STF18N60DM2 датащи(HTML) 2 Page - STMicroelectronics |
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2 / 12 page ![]() 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VGS Gate-source voltage ±25 V ID Drain current (continuous) at Tcase = 25 °C 12 A ID Drain current (continuous) at Tcase= 100 °C 7.6 A IDM (1) Drain current (pulsed) 48 A PTOT Total power dissipation at Tcase = 25 °C 25 W dv/dt(2) Peak diode recovery voltage slope 40 V/ns dv/dt(3) MOSFET dv/dt ruggedness 50 VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s; TC = 25 °C) 2.5 kV Tstg Storage temperature range –55 to 150 °C Tj Operating junction temperature range °C 1. Pulse width is limited by safe operating area. 2. ISD ≤ 12, di/dt ≤ 400 A/µs, VDS(peak) < V(BR)DSS, VDD = 400 V 3. VDS ≤ 480 V Table 2. Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case 5 °C/W Rthj-amb Thermal resistance junction-ambient 62.5 Table 3. Avalanche characteristics Symbol Parameter Value Unit IAR Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax) 2.5 A EAR Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 380 mJ STF18N60DM2 Electrical ratings DS10966 - Rev 5 page 2/12 |
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