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STWA70N60DM2 датащи(PDF) 3 Page - STMicroelectronics

номер детали STWA70N60DM2
подробное описание детали  N-channel 600 V, 0.037 typ., 66 A MDmesh™ DM2 Power MOSFET in a TO-247 long leads package
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
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STWA70N60DM2 датащи(HTML) 3 Page - STMicroelectronics

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STWA70N60DM2
Electrical ratings
DocID027892 Rev 2
3/12
1
Electrical ratings
Table 2: Absolute maximum ratings
Symbol
Parameter
Value
Unit
VGS
Gate-source voltage
±25
V
ID
Drain current (continuous) at Tcase = 25 °C
66
A
Drain current (continuous) at Tcase = 100 °C
42
IDM
(1)
Drain current (pulsed)
264
A
PTOT
Total dissipation at Tcase = 25 °C
446
W
dv/dt
(2)
Peak diode recovery voltage slope
50
V/ns
dv/dt
(3)
MOSFET dv/dt ruggedness
50
Tstg
Storage temperature
-55 to 150
°C
Tj
Operating junction temperature
Notes:
(1)
Pulse width is limited by safe operating area.
(2)
ISD
≤ 66 A, di/dt=900 A/μs; VDS peak < V(BR)DSS, VDD = 400 V.
(3)
VDS
≤ 480 V.
Table 3: Thermal data
Symbol
Parameter
Value
Unit
Rthj-case
Thermal resistance junction-case
0.28
°C/W
Rthj-amb
Thermal resistance junction-ambient
50
Table 4: Avalanche characteristics
Symbol
Parameter
Value
Unit
IAR
Avalanche current, repetitive or not repetitive (Pulse width limited by Tjmax)
10
A
EAR
Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V)
1500
mJ



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