STP36N60M6 datasheet(4/16 Pages) STMICROELECTRONICS

номер детали	STP36N60M6

подробное описание детали	N-channel 600 V, 85 m typ., 30 A MDmesh™ M6 Power MOSFETs in TO-220 and TO-247 packages

PDF	16 Pages

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производитель	STMICROELECTRONICS [STMicroelectronics]

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Electrical characteristics

STP36N60M6, STW36N60M6

4/16

DocID028429 Rev 3

Electrical characteristics

TC = 25 °C unless otherwise specified

Table 5: On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

VGS = 0 V, ID = 1 mA

600

IDSS

Zero gate voltage drain

current

VGS = 0 V, VDS = 600 V

µA

VGS = 0 V, VDS = 600 V,

TC = 125 °C(1)

100

µA

IGSS

Gate-body leakage current

VDS = 0 V, VGS = ±25 V

±5

µA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

3.25

4.75

RDS(on)

Static drain-source

on-resistance

VGS = 10 V, ID = 15 A

mΩ

Notes:

(1)Defined by design, not subject to production test.

Table 6: Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS= 100 V, f = 1 MHz,

VGS = 0 V

1960

Coss

Output capacitance

Crss

Reverse transfer

capacitance

Coss eq.(1)

Equivalent output

capacitance

VDS = 0 to 480 V, VGS = 0 V

332

Intrinsic gate resistance

f = 1 MHz, ID = 0 A

1.6

Ω

Total gate charge

VDD = 480 V, ID = 30 A,

VGS = 0 to 10 V

(see Figure 17: "Test circuit for

gate charge behavior")

44.3

Qgs

Gate-source charge

10.1

Qgd

Gate-drain charge

Notes:

(1)Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDSS

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