STL8N65M2 datasheet(3/15 Pages) STMICROELECTRONICS

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Electrical characteristics

TC = 25 °C unless otherwise specified

Table 4. On/off-state

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

VGS = 0 V, ID = 1 mA

650

IDSS

Zero gate voltage drain

current

VGS = 0 V, VDS = 650 V

µA

VGS = 0 V, VDS = 650 V

TC = 125 °C (1)

100

µA

IGSS

Gate-body leakage current

VDS = 0 V, VGS = ±25 V

±10

µA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

RDS(on)

Static drain-source

on-resistance

VGS = 10 V, ID = 2 A

1.25

Ω

1. Defined by design, not subject to production test.

Table 5. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 100 V, f = 1 MHz,

VGS = 0 V

270

Coss

Output capacitance

14.5

Crss

Reverse transfer capacitance

0.8

Coss eq. (1)

Equivalent capacitance

energy related

VDS = 0 to 520 V, VGS = 0 V

108

Intrinsic gate resistance

f = 1 MHz open drain

Ω

Total gate charge

VDD = 520 V, ID = 5 A

VGS = 0 to 10 V

(see Figure 14. Test circuit for

gate charge behavior )

Qgs

Gate-source charge

2.3

Qgd

Gate-drain charge

4.3

1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0

to 80% VDS.

Table 6. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD = 325 V, ID = 2.5 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 13. Test circuit for

resistive load switching times

and Figure 18. Switching time

waveform)

7.7

Rise time

td(off)

Turn-off delay time

19.5

Fall time

STL8N65M2

Electrical characteristics

DS13016 - Rev 1

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