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STS8DN6LF6AG датащи(PDF) 3 Page - STMicroelectronics

номер детали STS8DN6LF6AG
подробное описание детали  Automotive-grade dual N-channel 60 V, 21 m typ., 8 A STripFET F6 Power MOSFET in a SO-8 package
PDF  14 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
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STS8DN6LF6AG датащи(HTML) 3 Page - STMicroelectronics

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2
Electrical characteristics
TC = 25 °C unless otherwise specified.
Table 4. Static
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source breakdown voltage
VGS = 0 V, ID = 250 µA
60
V
IDSS
Zero gate voltage drain current
VGS = 0 V, VDS = 60 V
1
µA
IGSS
Gate-body leakage current
VDS = 0 V, VGS = ±20 V
±100
nA
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250 µA
1
2.5
V
RDS(on)
Static drain-source on-resistance
VGS = 10 V, ID = 4 A
21
24
mΩ
VGS = 4.5 V, ID = 4 A
22
26
Table 5. Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Ciss
Input capacitance
VDS = 25 V, f = 1 MHz, VGS = 0 V
-
1340
-
pF
Coss
Output capacitance
-
90
-
pF
Crss
Reverse transfer capacitance
-
60
-
pF
Qg
Total gate charge
VDD = 30 V, ID = 8 A, VGS = 10 V
(see Figure 13. Test circuit for gate
charge behavior)
-
27
-
nC
Qgs
Gate-source charge
-
4.6
-
nC
Qgd
Gate-drain charge
-
4.3
-
nC
Table 6. Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on delay time
VDD = 30 V, ID = 4 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 12. Test circuit for
resistive load switching times and
Figure 17. Switching time waveform)
-
9.6
-
ns
tr
Rise time
-
20
-
ns
td(off)
Turn-off delay time
-
56
-
ns
tf
Fall time
-
7
-
ns
STS8DN6LF6AG
Electrical characteristics
DS11953 - Rev 2
page 3/14



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