RFD3055 datasheet(2/8 Pages) HARRIS

номер детали	RFD3055

подробное описание детали	12A, 60V, Avalanche Rated, N-Channel Enhancement-Mode Power MOSFETs (MegaFETs)

PDF	8 Pages

Scroll/Zoom	100%

производитель	HARRIS [Harris Corporation]

домашняя страница	http://www.harris.com

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Speciﬁcations RFD3055, RFD3055SM, RFP3055

Electrical Speciﬁcations

TC = +25

oC, Unless Otherwise Speciﬁed

PARAMETER

SYMBOL

TEST CONDITIONS

LIMITS

UNITS

MIN

TYP

MAX

Drain-Source Breakdown Voltage

BVDSS

ID = 0.25mA, VGS = 0V

Gate Threshold Voltage

VGS(TH)

VGS = VDS, ID = 0.25mA

Zero Gate Voltage Drain Current

IDSS

VDS = 60V,

VGS = 0V

TC = +25

oC-

µA

TC = +150

oC-

µA

Gate-Source Leakage Current

IGSS

VGS = ±20V

100

On Resistance

rDS(ON)

ID = 12A, VGS = 10V

0.150

Turn-On Time

tON

VDD = 30V, ID = 12A

RL = 2.5Ω, VGS = +10V

RGS = 10Ω

Turn-On Delay Time

tD(ON)

-7-

Rise Time

-21-

Turn-Off Delay Time

tD(OFF)

-16-

Fall Time

-10-

Turn-Off Time

tOFF

Total Gate Charge

QG(TOT)

VGS = 0 to 20V

VDD = 48V,

ID = 12A,

RL = 4Ω

-19

Gate Charge at 10V

QG(10)

VGS = 0 to 10V

Threshold Gate Charge

QG(TH)

VGS = 0 to 2V

0.6

0.8

Plateau Voltage

V(PLATEAU)

ID = 12A, VDS = 15V

7.5

Input Capacitance

CISS

VDS = 25V, VGS = 0V

f = 1MHz

300

Output Capacitance

COSS

100

Reverse Transfer Capacitance

CRSS

-30-

Thermal Resistance Junction to Case

RθJC

2.8

oC/W

Thermal Resistance Junction to Ambient

RθJA

TO-251 and TO-252 Package

100

oC/W

TO-220 Package

oC/W

Source-Drain Diode Ratings and Characteristics

PARAMETER

SYMBOL

TEST CONDITIONS

LIMITS

UNITS

MIN

TYP

MAX

Forward Voltage

VSD

ISD = 12A

1.5

Reverse Recovery Time

tRR

ISD = 12A, dISD/dt = 100A/µs

100

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