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STL38DN6F7AG датащи(PDF) 3 Page - STMicroelectronics

номер детали STL38DN6F7AG
подробное описание детали  Automotive-grade N-channel 60 V, 24 m typ., 10 A STripFET™ F7 Power MOSFET in a PowerFLAT™ 5x6 double island package
PDF  15 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STL38DN6F7AG датащи(HTML) 3 Page - STMicroelectronics

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Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 3. On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source breakdown
voltage
ID = 250 μA, VGS = 0 V
60
V
IDSS
Zero gate voltage
drain current
VGS = 0 V, VDS = 60 V
1
µA
VGS = 0 V, VDS = 60 V,
TC= 125 °C (1)
100
µA
IGSS
Gate-body leakage
current
VGS = 20 V, VDS = 0 V
100
nA
VGS(th)
Gate threshold voltage
VDS = VGS , ID = 250 μA
2
4
V
RDS(on)
Static drain-source
on-resistance
VGS = 10 V, ID= 5 A
24
27
mΩ
1. Defined by design, not subject to production test.
Table 4. Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Ciss
Input capacitance
VDS = 25 V, f = 1 MHz,
VGS = 0 V
-
380
-
pF
Coss
Output capacitance
-
320
-
pF
Crss
Reverse transfer capacitance
-
7.9
-
pF
Qg
Total gate charge
VDD = 30 V, ID = 10 A,
VGS = 0 to 10 V
(see Figure 13. Test circuit for
gate charge behavior)
-
7.9
-
nC
Qgs
Gate-source charge
-
2.9
-
nC
Qgd
Gate-drain charge
-
2.4
-
nC
Table 5. Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on delay time
VDD = 30 V, ID = 5 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 12. Test circuit for
resistive load switching times
and Figure 17. Switching time
waveform)
-
12
-
ns
tr
Rise time
-
9
-
ns
td(off)
Turn-off delay time
-
16
-
ns
tf
Fall time
-
5
-
ns
Table 6. Source-drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
VSD (1)
Forward on voltage
ISD = 10 A, VGS = 0 V
-
1.3
V
STL38DN6F7AG
Electrical characteristics
DS12506 - Rev 1
page 3/15



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