STL210N4F7AG datasheet(4/14 Pages) STMICROELECTRONICS

номер детали	STL210N4F7AG

подробное описание детали	Automotive-grade N-channel 40 V, 1.3 m typ., 120 A STripFET™ F7 Power MOSFET in a PowerFLAT™ 5x6 package

PDF	14 Pages

Scroll/Zoom	100%

производитель	STMICROELECTRONICS [STMicroelectronics]

домашняя страница	http://www.st.com

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4 / 14 page

Electrical characteristics

STL210N4F7AG

4/14

DocID028773 Rev 1

Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 4: On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown voltage

VGS = 0 V, ID

= 250 μA

IDSS

Zero gate voltage

drain current

VGS = 0 V

VDS= 40 V

µA

IGSS

Gate-body leakage

current

VGS = 20 V, VDS = 0 V

100

VGS(th)

Gate threshold voltage

VDS = VGS, ID

= 250 μA

RDS(on)

Static drain-source

on-resistance

VGS = 10 V, ID = 16 A

1.3

1.6

mΩ

Table 5: Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 25 V, f = 1 MHz,

VGS= 0 V

3600

Coss

Output capacitance

1240

Crss

Reverse transfer

capacitance

Total gate charge

VDD = 20 V, ID = 40 A,

VGS = 10 V

(see Figure 14: "Test circuit for

gate charge behavior")

Qgs

Gate-source charge

Qgd

Gate-drain charge

Table 6: Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD = 20 V, ID = 20 A,

= 4.7 Ω, VGS = 10 V

(see Figure 13: "Test circuit for

resistive load switching times"

and Figure 18: "Switching time

waveform")

Rise time

td(off)

Turn-off delay time

Fall time

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