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STL110N4F7AG датащи(PDF) 3 Page - STMicroelectronics

номер детали STL110N4F7AG
подробное описание детали  Automotive-grade N-channel 40 V, 3.3 mΩ typ., 108 A STripFET™ F7 Power MOSFET in a PowerFLAT™ 5x6 package
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
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STL110N4F7AG датащи(HTML) 3 Page - STMicroelectronics

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STL110N4F7AG
Electrical ratings
DocID030194 Rev 3
3/14
1
Electrical ratings
Table 2: Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage
40
V
VGS
Gate-source voltage
±20
V
ID(1)
Drain current (continuous) at TC = 25 °C
108
A
ID(1)
Drain current (continuous) at TC = 100 °C
69
A
IDM(2)
Drain current (pulsed)
432
A
PTOT(1)
Total dissipation at TC = 25 °C
94
W
IAS
Single pulse avalanche current
(pulse width limited by maximum junction temperature)
24
A
EAS
Single pulse avalanche energy (Tj = 25 °C, ID = IAS, VDD = 25 V)
130
mJ
Tstg
Storage temperature range
-55 to 175
°C
Tj
Operating junction temperature range
Notes:
(1) Drain current is limited by package, the current capability of the silicon is 178 A at 25 °C
(2) Pulse width limited by safe operating area.
Table 3: Thermal data
Symbol
Parameter
Value
Unit
Rthj-case
Thermal resistance junction-case
1.6
°C/W
Rthj-pcb(1)
Thermal resistance junction-pcb
31
°C/W
Notes:
(1)When mounted on FR-4 board of 1 inch², 2oz Cu, t < 10 s



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