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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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L9945 датащи(PDF) 5 Page - STMicroelectronics |
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L9945 датащи(HTML) 5 Page - STMicroelectronics |
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5 / 151 page  Figure 3. Example of High-Side configuration with PMOS on channel 5 Note: the freewheeling diode is needed only in case of inductive load. BATT56 HS PMOS GNSP5 GND VBATT OUT5 GND GND GND SNGP5 DRN5 RG RPU CBATT RSH CM RM GADG2302171301PS DFW CESD PGND56 The picture below shows an example of Low-Side configuration with NMOS transistor on channel 3. Refer to this schematic in order to understand how the external FET must be mounted with respect to the DRNx/GNSPx/ SNGPx/PGNDx pins. Figure 4. Example of Low-Side configuration with NMOS on channel 3 GADG2302170929PS BATT34 LS NMOS DRN3 VBATT GNSP3 SNGP3 RG RPD CM RM RSH GND GND DFW CESD PGND34 Note: the freewheeling diode is needed only in case of inductive load. L9945 High-Side / Low-Side, with configurable FET type (N channel or P channel) DS12275 - Rev 8 page 5/151 |
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