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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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IPS2050H датащи(PDF) 9 Page - STMicroelectronics |
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IPS2050H датащи(HTML) 9 Page - STMicroelectronics |
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9 / 32 page  Figure 4. High (left) and Low (right) ILOAD control activation thresholds (IPK) and limitation levels (ILIM) 1 ILOAD IPKH-X ILIMH-X t < D PKX TJ < TJSD 1 ILOAD ILIML-X t > D PKX TJ < TJSD IPKL-X Table 11. Other protections Symbol Parameter Test Condition Min. Typ. Max. Unit Overtemperature protections TJSD Junction temperature shutdown - 150 170 190 °C TJR Junction temperature reset - - 150 - °C TJHYS Junction temperature hysteresis - 7 20 - °C TCSD Case temperature shutdown - - 130 - °C TCR Case temperature reset - - 110 - °C TCHYS Case temperature hysteresis - - 20 - °C Ground disconnection/Wire break ILGND GND disconnection output current VINX = Vcc = 24 V, VOUT = 0 V - - 0.5 mA VCC overvoltage VCLAMP VCC Clamp Voltage ICC ≤ 10 mA 65.5 70.0 73.5 V Demagnetization of inductive load VDEMAG Demagnetization Voltage IOUT = 0.5 A, Load ≥ 10 mH Vcc-76 Vcc-72.5 Vcc-68 V IPS2050H, IPS2050H-32, IPS2050HQ, IPS2050HQ-32 Electrical characteristics DS13779 - Rev 3 page 9/32 |
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