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STGO30H60DLLFBAG датащи(PDF) 6 Page - STMicroelectronics

номер детали STGO30H60DLLFBAG
подробное описание детали  Automotive-grade trench gate field-stop, 600 V, 30 A, high-speed HB series IGBT in a TO‑LL package
PDF  15 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGO30H60DLLFBAG датащи(HTML) 6 Page - STMicroelectronics

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Figure 13. Typical capacitance characteristics
GADG240120221000CVR
10 3
10 2
10 1
C
(pF)
VCE (V)
100
10-1
101
102
Cies
Cres
Coes
f = 1 MHz
Figure 14. Typical gate charge characteristics
GADG240120221001GCGE
10
8
6
4
2
0
0
40
80
120
160
200
VGE
(V)
Qg (nC)
VCC = 400 V, IC = 30 A, IG = 1.35 mA
Figure 15. Typical switching energy vs collector current
GADG240120221001SLC
1.6
1.2
0.8
0.4
0.0
0
10
20
30
40
50
60
Eoff
(mJ)
IC (A)
10
VGE = 5 V, TJ = 175
℃
Figure 16. Typical switching energy vs gate resistance
GADG240120221006SLG
2.5
2.0
1.5
1.0
0.5
0.0
0
10
20
30
40
Eoff
(mJ)
RG (Ω)
VGE = 5 V, TJ = 175
℃
IC = 30 A,
Figure 17. Typical switching energy vs temperature
GADG240120221004SLT
0.66
0.62
0.58
0.54
0.50
-25
25
75
125
175
Eoff
(mJ)
TJ (°C)
10
VGE = 5 V, IC = 30 A
Figure 18. Typical switching energy vs VCE
GADG240120221005SLV
1.2
1.0
0.8
0.6
0.4
0.2
0.0
100
200
300
400
500
Eoff
(mJ)
VCE (V)
10
VGE = 5 V,
IC = 30 A,
TJ = 175
℃
STGO30H60DLLFBAG
Electrical characteristics (curves)
DS12913 - Rev 4
page 6/15



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