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TDA75610DLVPDTR датащи(PDF) 10 Page - STMicroelectronics |
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TDA75610DLVPDTR датащи(HTML) 10 Page - STMicroelectronics |
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10 / 37 page ![]() Electrical specifications TDA75610DLVPD 10/37 DocID024175 Rev 8 3.3 Electrical characteristics Refer to the test circuit, VS = 14.4 V; RL = 4 Ω; f = 1 kHz; GV = 26 dB; Tamb = 25 °C; unless otherwise specified. Tested at Tamb = 25 °C and Thot = 105 °C; functionality guaranteed for Tj = -40 °C to 150 °C. Table 5. Electrical characteristics Symbol Parameter Test condition Min. Typ. Max. Unit General characteristics VS Supply voltage range RL = 4 Ω 6- 18 V RL = 2 Ω 6- 16 Id Total quiescent drain current - - 160 250 mA RIN Input impedance (differential) - 90 115 140 kΩ VAM Min. supply mute threshold IB1(D7) = 1 7 - 8 V IB1(D7) = 0 (default) 5 - 6 VOS Offset voltage Mute & play -80 - 80 mV Vdth Dump threshold - 18.5 - 20.5 V ISB Standby current Vstandby = 0 - 1 5 µA SVR Supply voltage rejection f = 100 Hz to 10 kHz; Vr = 1 Vpk; Rg = 600 Ω 60 70 - dB TON Turn on timing (Mute play transition) D2/D1 (IB1) 0 to 1 - 25 50 ms TOFF Turn off timing (Play mute transition) D2/D1 (IB1) 1 to 0 - 25 50 ms THWARN1 Average junction temperature for TH warning 1 DB1 (D7) = 1 - 160 - °C THWARN2 Average junction temperature for TH warning 2 DB4 (D7) = 1 - 145 - THWARN3 Average junction temperature for TH warning 3 DB4 (D6) = 1 - 125 - Audio performances PO Output power Max. power(1) Vs = 15.2 V, RL = 4 -45- W THD = 10 %, RL = 4 Ω THD = 1 %, RL = 4 Ω 23 - 25 22 - W W RL = 2 Ω; THD 10 % RL = 2 Ω; THD 1 % RL = 2 Ω; Max. power(1) Vs = 14.4 V - 44 33 64 - W W W Max power@ Vs = 6 V, RL = 4 -5- W |
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