P-Channel Electrical Characteristics (TJ =25 ℃, unless otherwise noted)

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Units

V(BR)DSS

Drain-Source Breakdown Voltage

-100

-

-

V

IDSS

Zero Gate Voltage Drain Current

-

-

-1.0

μA

IGSS

Gate to Body Leakage Current

-

-

±100

nA

VGS(th)

Gate Threshold Voltage

-1.0

-1.6

-2.5

V

RDS(on)

Static Drain-Source on-Resistance

-

40

52

mΩ

-

44

62

Ciss

Input Capacitance

f=1.0MHz

-

2120

-

pF

Coss

Output Capacitance

-

194

-

pF

Crss

Reverse Transfer Capacitance

-

13

-

pF

Total Gate Charge

-

40

-

nC

Qgs

Gate-Source Charge

-

7.8

-

nC

Qgd

Gate-Drain(“Miller”) Charge

-

8.6

-

nC

td(on)

Turn-on Delay Time

-

13

-

ns

tr

Turn-on Rise Time

-

39

-

ns

td(off)

Turn-off Delay Time

-

100.1

-

ns

Turn-off Fall Time

-

105.3

-

ns

IS

Maximum Continuous Drain to Source Diode Forward Current

-

-

-35

A

ISM

Maximum Pulsed Drain to Source Diode Forward Current

-

-

-140

A

VSD

Drain to Source Diode Forward Voltage

-

-

-1.2

V

trr

Body Diode Reverse Recovery Time

℃,

-

104

-

ns

Body Diode Reverse Recovery Charge

-

280

-

nC

Note :

1、The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%

3、The EAS data shows Max. rating . The test condition is V DD =-25V,V GS =-10V,L=0.1mH,IAS =-24A

4、The power dissipation is limited by 150℃ junction temperature

5、The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation.

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Rev :

2 / 5

01.09.2021

FDMS86163P