IRFD9020

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Vishay Siliconix

S16-1506-Rev. D, 01-Aug-16

2

Document Number: 90170

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

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Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. Pulse width

 300 μs; duty cycle  2 %.

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

TYP.

MAX.

UNIT

Maximum Junction-to-Ambient

RthJA

-120

°C/W

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = - 250 μA

-60

-

-

V

VDS Temperature Coefficient

V

DS/TJ

Reference to 25 °C, ID = -1 mA

-

- 0.056

-

V/°C

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = -1 μA

-2.0

-

-4.0

V

Gate-Source Leakage

IGSS

VGS = 20

-

-

100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = -60 V, VGS = 0 V

-

-

- 100

μA

VDS = -48 V, VGS = 0 V, TJ = 150 °C

-

-

- 500

Drain-Source On-State Resistance

RDS(on)

VGS = -10 V

ID = - 0.96 A b

-

-

0.28



Forward Transconductance

gfs

VDS = -25 V, ID = - 0.96 A b

1.3

-

-

S

Dynamic

Input Capacitance

Ciss

VGS = 0 V,

VDS = -25 V,

f = 1.0 MHz, see fig. 5

-570

-

pF

Output Capacitance

Coss

-360

-

Reverse Transfer Capacitance

Crss

-65

-

Total Gate Charge

Qg

VGS = -10 V

ID = - 11 A, VDS = -48 V,

see fig. 6 and 13 b

--

19

nC

Gate-Source Charge

Qgs

--

5.4

Gate-Drain Charge

Qgd

--

11

Turn-On Delay Time

td(on)

VDD = - 30 V, ID = -11 A,

Rg = 18 , RD = 2.5, see fig. 10b

-13

-

ns

Rise Time

tr

-68

-

Turn-Off Delay Time

td(off)

-15

-

Fall Time

tf

-29

-

Internal Drain Inductance

LD

Between lead,



6 mm (0.25") from

package and center of

die contact

-4.0

-

nH

Internal Source Inductance

LS

-6.0

-

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

IS

MOSFET symbol

showing the



integral reverse



p - n junction diode

--

- 1.6

A

Pulsed Diode Forward Current a

ISM

--

- 13

Body Diode Voltage

VSD

TJ = 25 °C, IS = -1.6 A, VGS = 0 V b

--

- 6.3

V

Body Diode Reverse Recovery Time

trr

TJ = 25 °C, IF = - 11A, di/dt = 100 A/μs b

-

100

200

ns

Body Diode Reverse Recovery Charge

Qrr

-

0.32

0.64

μC

Forward Turn-On Time

ton

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

D

S

G

S

D

G