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STTH60RQ06-Y датащи(PDF) 4 Page - STMicroelectronics |
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STTH60RQ06-Y датащи(HTML) 4 Page - STMicroelectronics |
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4 / 10 page ![]() Figure 7. Reverse recovery time versus dIF/dt (typical values) 0 40 80 120 160 200 240 0 50 100 150 200 250 300 350 400 450 500 dIF/dt(A/µs) tRR(ns) VR = 400 V Tj = 125°C IF = 60A IF = 15A IF = 30A Figure 8. Reverse recovery charges versus dIF/dt (typical values) 0 200 400 600 800 1000 1200 0 50 100 150 200 250 300 350 400 450 500 dIF/dt(A/µs) QRR(nC) VR = 400 V Tj = 125 °C IF = 60A IF = 15A IF = 30A Figure 9. Reverse recovery softness factor versus dIF/dt (typical values) 0.0 0.2 0.4 0.6 0.8 1.0 0 50 100 150 200 250 300 350 400 450 500 dIF/dt(A/µs) SFACTOR VR = 400 V Tj = 125 °C Figure 10. Relative variations of dynamic parameters versus junction temperature 0.0 0.4 0.8 1.2 1.6 2.0 25 50 75 100 125 Tj(°C) IF = IF(AV) VR = 400 V Reference: Tj = 125 °C IRM SFACTOR QRR Figure 11. Junction capacitance versus reverse voltage applied (typical values) 10 100 1000 1 10 100 1000 VR(V) C(pF) F =1 MHz VOSC = 30 mVRMS Tj = 25 °C Figure 12. Relative variation of non-repetitive peak surge forward current versus pulse duration (sinusoidal waveform) 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.1 1.0 10.0 IFSM(t p) / IFSM(10 ms) tp(ms) STTH60RQ06-Y Characteristics (curves) DS12510 - Rev 2 page 4/10 |
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