STPSC16H065A datasheet(3/9 Pages) STMICROELECTRONICS

номер детали	STPSC16H065A

подробное описание детали	650 V power Schottky silicon carbide rectifier

PDF	9 Pages

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производитель	STMICROELECTRONICS [STMicroelectronics]

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Table 4. Dynamic electrical characteristics

Symbol

Parameter

Test conditions

Typ.

Unit

QCj(1)

Total capacitive charge

VR = 400 V

Total capacitance

VR = 0 V, Tc = 25 °C, F = 1 MHz

750

VR = 300 V, Tc = 25 °C, F = 1 MHz

Most accurate value for the capacitive charge:

QcjVR = ∫0VRCjVdV

1.1

Characteristics (curves)

Figure 1. Forward voltage drop versus forward

current (typical values, low level)

0.5

1.0

1.5

2.0

2.5

3.0

3.5

IF(A)

(V)

= 175 °C

= 150 °C

Pulse test: tp = 500 µs

= 100 °C

= 25 °C

Figure 2. Forward voltage drop versus forward

current (typical values, high level)

100

120

140

160

IF(A)

= 25 °C

(V)

= 175 °C

= 100 °C

= 150 °C

Pulse test: tp = 500 µs

Figure 3. Reverse leakage current versus reverse

voltage applied (typical values)

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

50 100 150 200 250 300 350 400 450 500 550 600 650

(V)

Tj = 175 °C

Tj = 25 °C

R(µA)

Tj = 150 °C

Figure 4. Peak forward current versus case

temperature

100

125

150

175

Tc(°C)

IM (A)

δ= tp/T

δ = 0.3

δ = 0.1

δ = 0.5

δ = 0.7

δ = 1

STPSC16H065A

Characteristics (curves)

DS12768 - Rev 1

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