MAC218 Series MAC218A Series

2

Motorola Thyristor Device Data

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

R

θJC

2.2

°C/W

Characteristic

Symbol

Min

Typ

Max

Unit

Peak Blocking Current

(VD = Rated VDRM, gate open)

TJ = 25°C

TJ = 125°C

IDRM

—

—

—

—

10

2

µA

mA

Peak On-State Voltage (Either Direction)

(ITM = 11.3 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle t 2%)

VTM

—

1.7

2

Volts

Gate Trigger Current (Continuous dc)

(VD = 12 Vdc, RL = 12Ω)

Trigger Mode

MT2(+), Gate(+); MT2(+), Gate(–); MT2(–), Gate(–)

MT2(–), Gate(+) “A” SUFFIX ONLY

IGT

—

—

—

—

50

75

mA

Gate Trigger Voltage (Continuous dc)

(Main Terminal Voltage = 12 Vdc, RL = 100 Ohms)

MT2(+), G(+)

MT2(+), G(–)

MT2(–), G(–)

MT2(–), G(+) “A” SUFFIX ONLY

(Main Terminal Voltage = Rated VDRM, RL = 10 kΩ, TJ = +125°C)

MT2(+), G(+); MT2(–), G(–); MT2(+), G(–)

MT2(–), G(+) “A” SUFFIX ONLY

VGT

—

—

—

—

0.2

0.2

0.9

0.9

1.1

1.4

—

—

2

2

2

2.5

—

—

Volts

Holding Current (Either Direction)

(VD = 24 Vdc, Gate Open,

Initiating Current = 200 mA)

IH

—

—

50

mA

Critical Rate of Rise of Commutating Off-State Voltage

(VD = Rated VDRM, ITM = 11.3 A, Commutating

di/dt = 4.1 A/ms, Gate Unenergized, TC = 80°C)

dv/dt(c)

—

5

—

V/

µs

Critical Rate of Rise of Off-State Voltage

(VD = Rated VDRM, Exponential Voltage Rise, Gate Open,

TJ = 125°C)

dv/dt

—

100

—

V/

µs

105

115

7.0

6.0

5.0

4.0

3.0

2.0

1.0

0

0

IT(RMS) RMS ON STATE CURRENT (AMPS)

8.0

FIGURE 2 — POWER DISSIPATION

10

8.0

6.0

4.0

2.0

75

0

IT(RMS), RMS ON STATE CURRENT (AMPS)

FIGURE 1 — CURRENT DERATING

85

95

125

8.0

7.0

6.0

5.0

4.0

3.0

2.0

1.0