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STIPNS2M50-H датащи(PDF) 5 Page - STMicroelectronics

номер детали STIPNS2M50-H
подробное описание детали  SLLIMM-nano IPM, 3-phase inverter, 2 A, 1.7 Ω max., 500 V MOSFET
PDF  20 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STIPNS2M50-H датащи(HTML) 5 Page - STMicroelectronics

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2
Electrical ratings
2.1
Absolute maximum ratings
Table 2. Inverter part
Symbol
Parameter
Value
Unit
VDSS
MOSFET blocking voltage (or drain-source voltage) for each
MOSFET (VIN(1) = 0 V)
500
V
± ID
Continuous drain current each MOSFET (TC = 25 °C)
2
A
± IDP (2)
Peak drain current each MOSFET (less than 1 ms)
4
A
PTOT
Total power dissipation for each MOSFET (TC = 25 °C)
10.6
W
1. Applied among HINx, LINx and GND for x = U, V, W
2. Pulse width limited by maximum junction temperature.
Table 3. Control part
Symbol
Parameter
Min.
Max.
Unit
VOUT
Output voltage applied among OUTU, OUTV, OUTW - GND
Vboot - 21
Vboot + 0.3
V
VCC
Low voltage power supply
- 0.3
21
V
VCIN
Comparator input voltage
- 0.3
VCC + 0.3
V
Vop+
Op-amp non-inverting input
- 0.3
VCC + 0.3
V
Vop-
Op-amp inverting input
- 0.3
VCC + 0.3
V
Vboot
Bootstrap voltage
- 0.3
620
V
VIN
Logic input voltage applied among HIN, LIN and GND
- 0.3
15
V
VT/SD/OD
Open-drain voltage
- 0.3
15
V
dVOUT/dt
Allowed output slew rate
50
V/ns
Table 4. Total system
Symbol
Parameter
Value
Unit
VISO
Isolation withstand voltage applied between each pin and heat
sink plate (AC voltage, t = 60 s)
1000
Vrms
TJ
Power chip operating junction temperature range
-40 to 150
°C
TC
Module case operation temperature range
-40 to 125
°C
STIPNS2M50-H
Electrical ratings
DS12104 - Rev 3
page 5/20



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