Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(off)

Turn-off delay time

VCC = 300 V, IC = 50 A,

RG = 6.8 Ω, VGE = ±15 V,

dv/dt = 7400 V/µs

105

ns

tf

Current fall time

133

ns

Eoff(2)

Turn-off switching energy

1.36

mJ

td(on)

Turn-on delay time

VCC = 300 V, IC = 50 A,

RG = 6.8 Ω, VGE = ±15 V,

di/dt = 2010 A/µs, TJ = 150 °C

147

ns

tr

Current rise time

20

ns

Eon(1)

Turn-on switching energy

0.318

mJ

td(off)

Turn-off delay time

VCC = 300 V, IC = 50 A,

RG = 6.8 Ω, VGE = ±15 V,

dv/dt = 6000 V/µs, TJ = 150 °C

104

ns

tf

Current fall time

194

ns

Eoff(2)

Turn-off switching energy

1.82

mJ

tSC

Short-circuit withstand time

VCC ≤ 360 V, VGE ≤ 15 V,

TJstart ≤ 150 °C

6

µs

RTHj-c

Thermal resistance junction-to-

case

Each IGBT

0.65

0.72

°C/W

RTHc-h

Thermal resistance case-to-

heatsink

Each IGBT, λgrease = 1 W/(m·°C)

0.79

°C/W

1. Including the reverse recovery of the diode.

2. Including the tail of the collector current.

1.1.2

Diode

Limiting values at TJ = 25 °C, unless otherwise specified.

Table 3. Absolute maximum ratings of the diode, inverter stage

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

650

V

IF

Continuous forward current (TC = 100 °C)

50

A

IFP(1)

Pulsed forward current (tp = 1 ms)

100

A

TJMAX

Maximum junction temperature

175

°C

TJop

Operating junction temperature range under switching conditions

-40 to 150

°C

1. Pulse width limited by maximum junction temperature

Table 4. Electrical characteristics of the diode, inverter stage

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

VF

(terminal)

Forward voltage

IF = 50 A

-

1.85

2.65

V

IF = 50 A, TJ = 150 ˚C

-

1.65

trr

Reverse recovery time

IF = 50 A, VR = 300 V,

VGE = ±15 V, diF/dt = 2320 A/μs

-

155

ns

Qrr

Reverse recovery charge

-

2.32

µC

Irrm

Reverse recovery current

-

41

A

Erec

Reverse recovery energy

-

0.53

mJ

A2C50S65M2-F

Inverter stage

DS12341 - Rev 3

page 3/18