1

Electrical ratings

1.1

Inverter stage

Limiting values at TJ = 25 °C, unless otherwise specified.

1.1.1

IGBTs

Table 1. Absolute maximum ratings of the IGBTs, inverter stage

Symbol

Description

Value

Unit

VCES

Collector-emitter voltage (VGE = 0)

1200

V

IC

Continuous collector current (TC = 100 °C)

35

A

ICP(1)

Pulsed collector current (tp = 1 ms)

70

A

VGE

Gate-emitter voltage

± 20

V

PTOT

Total power dissipation of each IGBT (TC = 25 °C, TJ = 175 °C)

250

W

TJMAX

Maximum junction temperature

175

°C

TJop

Operating junction temperature range under switching conditions

-40 to 150

°C

1. Pulse width limited by maximum junction temperature.

Table 2. Electrical characteristics of the IGBTs, inverter stage

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)CES

Collector-emitter

breakdown voltage

IC = 1 mA, VGE = 0 V

1200

V

VCE(sat)

(terminal)

Collector-emitter

saturation voltage

VGE = 15 V, IC= 35 A

1.95

2.45

V

VGE = 15 V, IC = 35 A, TJ = 150 ˚C

2.3

V

VGE(th)

Gate threshold voltage

VCE = VGE, IC = 1 mA

5

6

7

V

ICES

Collector cut-off current

VGE = 0 V, VCE = 1200 V

100

μA

IGES

Gate-emitter leakage

current

VCE = 0 V, VGE = ±20 V

±500

nA

Cies

Input capacitance

VCE = 25 V, f = 1 MHz, VGE = 0 V

2154

pF

Coes

Output capacitance

164

pF

Cres

Reverse transfer

capacitance

86

pF

Qg

Total gate charge

VCC = 960 V, IC = 35 A,

VGE = ±15 V

163

nC

td(on)

Turn-on delay time

VCC = 600 V, IC = 35 A,

RG = 10 Ω, VGE = ±15 V,

di/dt = 1460 A/µs

127

ns

tr

Current rise time

18.5

ns

Eon (1)

Turn-on switching energy

1.065

mJ

A2C35S12M3

Electrical ratings

DS11506 - Rev 6

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