STAC1011-500 datasheet(3/9 Pages) STMICROELECTRONICS

номер детали	STAC1011-500

подробное описание детали	500 W, 50 V, 700 to 1200 MHz RF power LDMOS transistor

PDF	9 Pages

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производитель	STMICROELECTRONICS [STMicroelectronics]

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Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 4. Static (per side)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown voltage

VGS = 0 V, ID = 100 µA

110

IDSS

Zero-gate voltage drain current

VGS = 0 V, VDS = 50 V

μA

IGSS

Gate-body leakage current

VDS = 0 V, VGS = 6 V

μA

VGS(th)

Gate threshold voltage

VDS = 50 V, ID = 50 mA

1.0

3.0

VDS(on)

Static drain-source on-voltage

VGS = 10 V, ID = 5 A

1.4

CISS

Common source input capacitance

VGS = 0 V, VDD = 50 V,

FREQ = 1 MHz

TBD

CRSS

Common source feedback

capacitance

COSS

Common source output

capacitance

Table 5. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

POUT

Output power

VDD = 50 V, IDQ = 0.02 A, Pin = 14 W,

FREQ = 1030 to 1090 MHz

500

Gain

Power gain

Efficiency

Drain efficiency

IMD3

3rd order intermodulation

TBD

dBc

VSWR

Load mismatch

POUT = 500 W, all phases

10:1

Table 6. Impedance data

Frequency (in MHz)

Input impedance (ZIN)

Drain load impedance (ZDL)

1030

1.527 + 1.687

1.451 - 0.115

1060

1.376 + 1.128

1.436 - 0.186

1090

1.266 - 0.570

1.389 - 0.256

STAC1011-500

Electrical characteristics

DS12758 - Rev 3

page 3/9

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