D4E

3

1

2

5

4

Pin connection

Pin

Connection

1

Drain A

2

Drain B

3

Source (bottom side)

4

Gate B

5

Gate A

Features

Order code

Frequency

VDD

POUT

Gain

Efficiency

RF5L08600CB4

650 MHz

50 V

650 W

19.5 dB

67%

•

High efficiency and linear gain operations

•

Integrated ESD protection

•

Internally matched pair transistors in push-pull configuration

•

Large positive and negative gate-source voltage range for improved class C

operation

•

Excellent thermal stability, low HCI drift

•

In compliance with the european directive 2002/95/EC

Applications

•

Wideband lab amplifier from 0.4 to 1 GHz

•

Digital UHF TV 470-860 MHz

•

650 MHz particle accelerator

•

915 MHz RF energy applications

Description

The RF5L08600CB4 is a 650 W, 50 V, high performance, internally matched LDMOS

FET, designed for multiple applications in the frequency range from 0.4 to 1 GHz.

Product status link

RF5L08600CB4

Product summary

Order code

RF5L08600CB4

Marking

5L08600

Package

D4E

Packing

Tray

Base/bulk quantity

20/100

650 W, 50 V, 0.4 to 1 GHz RF power LDMOS transistor

RF5L08600CB4

Datasheet

DS13635 - Rev 2 - May 2021

For further information contact your local STMicroelectronics sales office.

www.st.com