2

Electrical characteristics

TC = 25 °C unless otherwise specified.

Table 4. Static (per side)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown voltage

VGS = 0 V, ID = 100 µA

110

-

V

IDSS

Zero-gate voltage drain current

VGS = 0 V, VDS = 50 V

-

1

μA

VDS = 0 V, VGS = 90 V

-

IGSS

Gate-body leakage current

VGS = -8/10 V, VDS = 0 V

-

±100

nA

VGS(th)

Gate threshold voltage

VDS = 50 V, ID = 600 μA

1

-

3

V

VGS(Q)

Gate quiescent voltage

VDS= 1 V, ID= 100 mA

2

-

5

V

VDS(on)

Static drain-source on-voltage

VGS = 10 V, ID = 5 A

-

1.4

V

RDS(on)

Drain-source on-state resistance

VGS= 10 V, VDS=100 mV

-

1

Ω

IDS(on)

Static drain-source on-current

-

2.5

A

Table 5. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

f

Frequency

400

1000

MHz

POUT

Output power

f = 860 MHz at 1dB compression

400

W

GPS

Power gain

19

dB

ƞD

Drain efficiency

61

%

VSWR

Load mismatch

POUT = 400 W pulsed CW output

power, all phases

10:1

Note:

VDD = 50 V, IDQ = 200 mA, pulsed CW, pulse width=100 µs, duty cycle=10%.

RF5L08350CB4

Electrical characteristics

DS13248 - Rev 2

page 3/12