2

Electrical characteristics

TC = 25 °C unless otherwise specified.

Table 4. Static (per side)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown voltage

VGS = 0 V, ID = 100 μA

110

V

IDSS

Zero gate voltage drain leakage

current

VGS = 0 V, VDS = 50 V

1

μA

VGS = 0 V, VDS = 90 V

IGSS

Gate-source leakage current

VGS = -8/10 V, VDS = 0 V

±100

nA

VGS(th)

Gate threshold voltage

VDS = 50 V, ID = 600 µA

2.0

2.8

V

VGS(Q)

Gate quiescent voltage

VDS = 1 V, ID = 400 mA

2

5

V

VDS(on)

Static drain-source on-voltage

VGS = 10 V, ID = 5 A

600

mV

IDS(on)

Static drain-source on-current

VGS = 10 V, VDS = 100 mV

2.5

A

RDS(on)

Drain-source on-state resistance

VGS = 10 V, VDS = 100 mV

1

Ω

Ciss

Common source input

capacitance

VGS = 0 V, VDD = 50 V, f = 1 MHz

430

pF

Crss

Common source feedback

capacitance

1.6

pF

Coss

Common source output

capacitance

100

pF

Table 5. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

f

Frequency

500

MHz

POUT

Output power

f = 108 MHz, 2.5 dB compression

-

1000

W

GPS

Power gain

-

21

dB

ηD

Drain efficiency

-

77

%

VSWR

Load mismatch

POUT = 1000 W, all phases

-

10:1

Note:

VDD = 50 V, IDQ = 200 mA, pulsed CW, pulse width = 100 μs, duty cycle = 10%

RF5L051K0CB4

Electrical characteristics

DS13744 - Rev 2

page 3/12