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STPSC20065DI датащи(PDF) 1 Page - STMicroelectronics

номер детали STPSC20065DI
подробное описание детали  650 V power Schottky silicon carbide diode
PDF  13 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

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July 2017
DocID029246 Rev 2
1/13
This is information on a product in full production.
www.st.com
STPSC20065
650 V power Schottky silicon carbide diode
Datasheet - production data
Features
No reverse recovery charge in application
current range
Switching behavior independent of
temperature
Dedicated to PFC applications
Insulated package TO-220AC ins:
Insulated voltage: 2500 V rms
Typical package capacitance: 7 pF
High forward surge capability
ECOPACK®2 compliant component
Maximum operating: Tj 175 °C
Description
The SiC diode is an ultra high performance
power Schottky diode. It is manufactured using a
silicon carbide substrate. The wide band gap
material allows the design of a Schottky diode
structure with a 650 V rating. Due to the Schottky
construction, no recovery is shown at turn-off and
ringing patterns are negligible. The minimal
capacitive turn-off behavior is independent of
temperature.
Especially suited for use in PFC applications, this
ST SiC diode will boost performance in hard
switching conditions. Its high forward surge
capability ensures good robustness during
transient phases.
Table 1: Device summary
Symbol
Value
IF(AV)
20 A
VRRM
650 V
Tj (max.)
175 °C
VF (typ.)
1.30 V
DO-247
A
K
A
A
A
K
K
K
K
NC
TO-220AC Ins
TO-220AC


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