STGP8M120DF3 datasheet(1/15 Pages) STMICROELECTRONICS

номер детали	STGP8M120DF3

подробное описание детали	Trench gate field-stop, 1200 V, 8 A, low-loss M series IGBT in a TO-220 package

PDF	15 Pages

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производитель	STMICROELECTRONICS [STMicroelectronics]

домашняя страница	http://www.st.com

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TO-220

TAB

C(2, TAB)

E(3)

NG1E3C2T

G(1)

Features

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10 µs of minimum short-circuit withstand time

•

VCE(sat) = 1.85 V (typ.) @ IC = 8 A

•

Tight parameter distribution

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Positive VCE(sat) temperature coefficient

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Low thermal resistance

•

Soft and very fast recovery antiparallel diode

•

Maximum junction temperature: TJ = 175 °C

Applications

•

Industrial drives

•

UPS

•

Solar

•

Welding

•

General-purpose inverters

Description

This device is an IGBT developed using an advanced proprietary trench gate field-

stop structure. The device is part of the M series IGBTs, which represent an optimal

balance between inverter system performance and efficiency where low-loss and

short-circuit functionality are essential. Furthermore, the positive VCE(sat) temperature

coefficient and tight parameter distribution result in safer paralleling operation.

Product status link

STGP8M120DF3

Product summary

Order code

STGP8M120DF3

Marking

G8M120DF3

Package

TO-220

Packing

Tube

Trench gate field-stop, 1200 V, 8 A, low-loss M series IGBT in a TO-220 package

STGP8M120DF3

Datasheet

DS11847 - Rev 2 - April 2018

For further information contact your local STMicroelectronics sales office.

www.st.com

Аналогичный номер детали - STGP8M120DF3

производитель	номер детали	датащи	подробное описание детали
STMicroelectronics	STGP8NC60K	448Kb / 17P	N-channel 600V - 8A - D2PAK / DPAK / TO-220 Short circuit rated PowerMESH IGBT 02-Oct-2007
STMicroelectronics	STGP8NC60KD	562Kb / 18P	600 V - 8 A - short circuit rugged IGBT 01-Apr-2008
Inchange Semiconductor ...	STGP8NC60KD	389Kb / 2P	IGBT

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Аналогичное описание - STGP8M120DF3

производитель	номер детали	датащи	подробное описание детали
STMicroelectronics	STGW15M120DF3	1Mb / 19P	Trench gate field-stop IGBT, M series 1200 V, 15 A low loss 31-Oct-2014
	STGW25M120DF3	1Mb / 18P	Trench gate field-stop IGBT, M series 1200 V, 25 A low loss 31-Oct-2014
	STGW40M120DF3	1Mb / 18P	Trench gate field-stop IGBT, M series 1200 V, 40 A low loss 10-Nov-2014
	STGF10M65DF2	989Kb / 17P	Trench gate field-stop IGBT, M series 650 V, 10 A low-loss in TO-220FP package April 2017
	STGF30M65DF2	731Kb / 16P	Trench gate field-stop IGBT, M series 650 V, 30 A low-loss in a TO-220FP package 11-Apr-2017
	STGP15M120F3	429Kb / 15P	Trench gate field-stop, 1200 V, 15 A, low-loss M series IGBT in a TO-220 package 01-Aug-2018
	STGYA50M120DF3	2Mb / 15P	Trench gate field-stop, 1200 V, 50 A, low-loss M series IGBT in a Max247 long leads package 01-Oct-2021
	STG35M120F3D7	184Kb / 9P	1200 V, 35 A, trench gate field-stop, M series, low-loss IGBT die in D7 packing 20-Feb-2018
	STG15M120F3D8	224Kb / 8P	1200 V, 15 A trench gate field‑stop M series low‑loss IGBT die in D8 packing 18-Jan-2022
	STG15M120F3D7	263Kb / 10P	Trench gate field-stop 1200 V, 15 A low-loss M series IGBT die in D7 packing 16-Aug-2022

More results

STGP8M120DF3 датащи(PDF) 1 Page - STMicroelectronics

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Аналогичный номер детали - STGP8M120DF3

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