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RHFAHC00 датащи(PDF) 5 Page - STMicroelectronics

номер детали RHFAHC00
подробное описание детали  Rad-Hard, quad high speed NAND gate
PDF  15 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

RHFAHC00 датащи(HTML) 5 Page - STMicroelectronics

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Table 5. AC electrical characteristics
Symbol
Parameters
Test conditions
Vcc (V)
Min.
Typ.
Max.
Unit
Cpd
Power dissipation capacitance
Cpd = Iccrms/(Vcc*F)(1)(2)
F=1 MHz, Load=10 pF
1.8
5
pF
3.3
7
Tphl
Propagation delay mA or mB to mY
Load=10 pF to GND
1.8
1.5
5.5
ns
2.5
1.2
3.5
3.3
1
3
Tplh
Propagation delay mA or mB to mY
1.8
1.5
5.5
ns
2.5
1.2
3.5
3.3
1
3
Tr
Output rise time
1.8
1.9
ns
2.5
1.4
3.3
1.3
Tf
Output fall time
1.8
1.9
ns
2.5
1.4
3.3
1.3
1. Guaranteed by design and characterization.
2. Power dissipation capacitance (Cpd) determines both the power consumption (PD) and dynamic current consumption (IS).
Where: PD = (Cpd + CLoad) (VCC x VCC) x f + (ICC x VCC) IS = (Cpd + CLoad) VCC x f + ICC, where f is the frequency of the
input signal and CLoad is the external output load capacitance.
RHFAHC00
Electrical characteristics
DS12465 - Rev 2
page 5/15



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