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TLP627M датащи(PDF) 3 Page - Toshiba Semiconductor

номер детали TLP627M
подробное описание детали  Photocouplers Infrared LED & Photo Darlington Transistor
PDF  18 Pages
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производитель  TOSHIBA [Toshiba Semiconductor]
домашняя страница  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TLP627M датащи(HTML) 3 Page - Toshiba Semiconductor

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TLP627M,TLP627MF
3
7.
7.
7.
7. Absolute Maximum Ratings (Note) (Unless otherwise specified, T
Absolute Maximum Ratings (Note) (Unless otherwise specified, T
Absolute Maximum Ratings (Note) (Unless otherwise specified, T
Absolute Maximum Ratings (Note) (Unless otherwise specified, Taaaa = 25
= 25
= 25
= 25 
))))
LED
Detector
Common
Characteristics
Input forward current
Input forward current derating
Input forward current (pulsed)
Input reverse voltage
Input power dissipation
Input power dissipation derating
Junction temperature
Collector-emitter voltage
Emitter-collector voltage
Collector current
Collector power dissipation
Collector power dissipation derating
Junction temperature
Operating temperature
Storage temperature
Lead soldering temperature
Total power dissipation
Total power dissipation derating
Isolation voltage
(Ta ≥ 90 )
(Ta ≥ 90 )
(Ta ≥ 25 )
(10 s)
(Ta ≥ 25 )
(AC, 60 s, R.H. ≤ 60 %)
Symbol
IF
∆IF/∆Ta
IFP
VR
PD
∆PD/∆Ta
Tj
VCEO
VECO
IC
PC
∆PC/∆Ta
Tj
Topr
Tstg
Tsol
PT
∆PT/∆Ta
BVS
Note
(Note 1)
(Note 2)
Rating
50
-1.42
1
5
100
-2.85
125
300
0.3
150
150
-1.5
125
-55 to 110
-55 to 125
260
250
-2.5
5000
Unit
mA
mA/
A
V
mW
mW/
V
V
mA
mW
mW/
mW
mW/
Vrms
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Pulse width (PW) ≤ 0.1 ms, f = 100 Hz
Note 2: This device is considered as a two-terminal device: Pins 1 and 2 are shorted together, and pins 3 and 4 are
shorted together.
8.
8.
8.
8. Electrical Characteristics (Unless otherwise specified, T
Electrical Characteristics (Unless otherwise specified, T
Electrical Characteristics (Unless otherwise specified, T
Electrical Characteristics (Unless otherwise specified, Taaaa = 25
= 25
= 25
= 25 
))))
LED
Detector
Characteristics
Input forward voltage
Input reverse current
Input capacitance
Collector-emitter breakdown voltage
Emitter-collector breakdown voltage
Dark Current
Collector-emitter capacitance
Symbol
VF
IR
Ct
V(BR)CEO
V(BR)ECO
IDARK
CCE
Note
Test Condition
IF = 10 mA
VR = 5 V
V = 0 V, f = 1 MHz
IC = 0.1 mA
IE = 0.1 mA
VCE = 200 V
VCE = 200 V, Ta = 85 
V = 0 V, f = 1 MHz
Min
1.1
300
0.3
Typ.
1.25
30
0.002
900
Max
1.4
10
0.2
20
Unit
V
µA
pF
V
V
µA
pF
9.
9.
9.
9. Coupled Electrical Characteristics (Unless otherwise specified, T
Coupled Electrical Characteristics (Unless otherwise specified, T
Coupled Electrical Characteristics (Unless otherwise specified, T
Coupled Electrical Characteristics (Unless otherwise specified, Taaaa = 25
= 25
= 25
= 25 
))))
Characteristics
Current transfer ratio
Saturated current transfer ratio
Collector-emitter saturation voltage
OFF-state collector current
Symbol
IC/IF
IC/IF(sat)
VCE(sat)
IC(off)
Note
Test Condition
IF = 1 mA, VCE = 1 V
IF = 10 mA, VCE = 1 V
IC = 10 mA, IF = 1 mA
IC = 100 mA, IF = 10 mA
VF = 0.7 V, VCE = 200 V
Min
1000
500
0.3
Typ.
6000
Max
1.0
1.2
20
Unit
%
%
V
µA
2018-12-06
Rev.1.0
©2018
Toshiba Electronic Devices & Storage Corporation



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